ANGULAR-DISTRIBUTION OF SPUTTERED GE ATOMS BY LOW KEV AR-BOMBARDMENT(AND NE+ ION)

Citation
Tk. Chini et al., ANGULAR-DISTRIBUTION OF SPUTTERED GE ATOMS BY LOW KEV AR-BOMBARDMENT(AND NE+ ION), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 119(3), 1996, pp. 387-391
Citations number
29
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
ISSN journal
0168583X
Volume
119
Issue
3
Year of publication
1996
Pages
387 - 391
Database
ISI
SICI code
0168-583X(1996)119:3<387:AOSGAB>2.0.ZU;2-K
Abstract
We report the measurement on the angular distribution of material sput tered from Ge target bombarded with normally incident Ar+ and Ne+ ions at room temperature. The energy of the ions was varied from 0.6 keV t o 4.0 keV. Sputter deposited material was collected on Al foils and su bsequently analyzed by an electron probe micro analyzer (EPMA) to obta in the angular distribution. All the results were well-fitted by distr ibutions of the form cos(n) theta with n varying from 1.25 to 1.63. In the present experiment Ne sputtering of germanium gives rise to stron g over-cosine angular distribution of sputtered material in comparison to Ar sputtering.