MATERIAL PARAMETERS OF QUATERNARY III-V SEMICONDUCTORS FOR MULTILAYERMIRRORS AT 1.55-MU-M WAVELENGTH

Authors
GUDEN M PIPREK J
Citation
M. Guden et J. Piprek, MATERIAL PARAMETERS OF QUATERNARY III-V SEMICONDUCTORS FOR MULTILAYERMIRRORS AT 1.55-MU-M WAVELENGTH, Modelling and simulation in materials science and engineering, 4(4), 1996, pp. 349-357
Citations number
26
Categorie Soggetti
Material Science","Physics, Applied
Journal title
Modelling and simulation in materials science and engineering → ACNP
ISSN journal
09650393
Volume
4
Issue
4
Year of publication
1996
Pages
349 - 357
Database
ISI
SICI code
0965-0393(1996)4:4<349:MPOQIS>2.0.ZU;2-0
Abstract
Nine quaternary (Al,Ga,In)-(P,As,Sb) semiconductor compounds lattice m atched to InP are investigated theoretically. Direct bandgap, refracti ve index at 1.55 mu m wavelength, and thermal conductivity are calcula ted as a function of the composition. These material properties are im portant, e.g. in distributed Bragg reflectors of vertical-cavity laser s. The alloy systems AlGaAsSb, AlGaPSb and GaInPSb are found to promis e better performance of those mirrors than the common InGaAsP system.