M. Guden et J. Piprek, MATERIAL PARAMETERS OF QUATERNARY III-V SEMICONDUCTORS FOR MULTILAYERMIRRORS AT 1.55-MU-M WAVELENGTH, Modelling and simulation in materials science and engineering, 4(4), 1996, pp. 349-357
Nine quaternary (Al,Ga,In)-(P,As,Sb) semiconductor compounds lattice m
atched to InP are investigated theoretically. Direct bandgap, refracti
ve index at 1.55 mu m wavelength, and thermal conductivity are calcula
ted as a function of the composition. These material properties are im
portant, e.g. in distributed Bragg reflectors of vertical-cavity laser
s. The alloy systems AlGaAsSb, AlGaPSb and GaInPSb are found to promis
e better performance of those mirrors than the common InGaAsP system.