ELECTRONIC-STRUCTURE OF ALXGA1-XAS AND GAPXAS1-X ALLOYS MODIFIED VIRTUAL CRYSTAL APPROXIMATION CALCULATION USING SP(3)S(ASTERISK) BAND STRUCTURES

Authors
FERHAT M BOUHAFS B ZAOUI A CERTIER M KEHLIFA B AOURAG H
Citation
M. Ferhat et al., ELECTRONIC-STRUCTURE OF ALXGA1-XAS AND GAPXAS1-X ALLOYS MODIFIED VIRTUAL CRYSTAL APPROXIMATION CALCULATION USING SP(3)S(ASTERISK) BAND STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 41(3), 1996, pp. 304-309
Citations number
37
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
41
Issue
3
Year of publication
1996
Pages
304 - 309
Database
ISI
SICI code
0921-5107(1996)41:3<304:EOAAGA>2.0.ZU;2-J
Abstract
A simple light-binding sp(3)s model, which incorporates compositional disorder as an effective potential, is used for the calculations of t he electronic structures of the semiconducting alloys AlxGa1-xAs and G aPxAs1-x. Our results for various interesting quantities, including ba nd-gap horizons and crossover of the band gaps of these two systems, a re compared with the available data; a good agreement is found. Copyri ght (C) 1996 Elsevier Science S.A.