DEVELOPMENT OF A BICMOS SMART POWER PROCE SS-BASED ON LOCAL SIMOX-TECHNOLOGY

Authors
WEYERS J ROST W VOGT H
Citation
J. Weyers et al., DEVELOPMENT OF A BICMOS SMART POWER PROCE SS-BASED ON LOCAL SIMOX-TECHNOLOGY, Electrical engineering, 79(5), 1996, pp. 335-341
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electrical engineering → ACNP
ISSN journal
09487921
Volume
79
Issue
5
Year of publication
1996
Pages
335 - 341
Database
ISI
SICI code
0948-7921(1996)79:5<335:DOABSP>2.0.ZU;2-5
Abstract
The paper describes a new 50 V BiCMOS smart power process. The develop ment includes the monolithic integration of dielectrical isolated 1.5 mu m CMOS devices, NPN/PNP bipolar transistors, 50 V vertical and quas ivertical DMOS power transistors, poly-n(+) capacitors, Zener diodes, implanted resistors and double metal wiring. The process will be used to fabricate efficient and self protected circuits with integrated dio de or DMOS full bridges.