The combination of bipolar and MOS-transistors offers a large potentia
l to develop complex circuits on a single chip. The large transconduct
ance and the high transit frequency of the bipolar transistor allows t
he realization of precision analog baseband circuits and of RF-circuit
s capable to operate at frequencies up to several GHz. In contrast the
transconductance of the MOS-transistor is lower but it has an insulat
ing gate and yields an excellent bidirectional switch. The BiCMOS-tech
nology combines the benefits of both technologies. This contribution s
hows some applications of analog BiCMOS circuits which cannot be easil
y duplicated in other technologies.