BICMOS CIRCUITS FOR RADIOFREQUENCY AND BA SEBAND SIGNAL-PROCESSING

Citation
S. Bender et al., BICMOS CIRCUITS FOR RADIOFREQUENCY AND BA SEBAND SIGNAL-PROCESSING, Electrical engineering, 79(5), 1996, pp. 365-369
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
09487921
Volume
79
Issue
5
Year of publication
1996
Pages
365 - 369
Database
ISI
SICI code
0948-7921(1996)79:5<365:BCFRAB>2.0.ZU;2-4
Abstract
The combination of bipolar and MOS-transistors offers a large potentia l to develop complex circuits on a single chip. The large transconduct ance and the high transit frequency of the bipolar transistor allows t he realization of precision analog baseband circuits and of RF-circuit s capable to operate at frequencies up to several GHz. In contrast the transconductance of the MOS-transistor is lower but it has an insulat ing gate and yields an excellent bidirectional switch. The BiCMOS-tech nology combines the benefits of both technologies. This contribution s hows some applications of analog BiCMOS circuits which cannot be easil y duplicated in other technologies.