PREPARATION AND CHARACTERIZATION OF PHOSP HORUS OXINITRIDE THIN-FILMSFOR INP PASSIVATION

The present three techniques to prepare stable, homogeneous and moistu re insensitive phosphorus oxinitride insulating films. They were fabri cated directly from PON solid sample. The deposited films were charact erized by optical absorption in UV-visible, X-ray Photoelectron Spectr oscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS). The optical b and gap value for the best films is 4 eV. X-ray photoelectron spectros copy showed that the layers deposited on substrates maintained at temp erature T-s < 350 degrees C are POxNy - type and those deposited at te mperature T-s greater than or equal to 350 degrees C are POxNyInz - ty pe. The resistivity and breakdown strength of the films are of the ord er of 10(11) Ohm cm and 10(6) V cm(-1) respectively.