INTENSE LASER FIELD-EFFECT ON CONFINED HYDROGENIC IMPURITIES IN QUANTUM SEMICONDUCTORS

The influence of an intense high-frequency laser field on the binding energy of a shallow neutral donor impurity in a quantum semiconductor structure such as GaAs/AlGaAs is reported. By making use of a nonpertu rbative theory and the variational approach it was found that for an o n-centre hydrogenic impurity in the given quantum well, the binding en ergy for different well widths increases, reaches a maximum, and then decreases quite rapidly with increasing laser field amplitude of the q uiver motion of the electron.