A GRATINGLESS WAVELENGTH STABILIZED SEMICONDUCTOR-LASER

A single frequency laser structure is obtained by coupling a high orde r mode of a semiconductor waveguide to a low index polymer waveguide. The device does not require a grating or regrowth, emits in a mode com patible with optical fibers, and may be immune to catastrophic mirror damage. The epilayers of the semiconductor waveguide use quarterwave r eflectors to support a mode with a low enough effective index to phase match to the polymer waveguide. The coupling between the two waveguid es is highly frequency selective and therefore stabilizes the waveleng th. Preliminary structures emit in a single longitudinal and spatial m ode, have 30 dB of sidemode suppression, and emit about 6 mW into a fi ber compatible mode. (C) 1996 American Institute of Physics.