FABRICATION OF GAAS AND INAS WIRES IN NANOCHANNEL GLASS

A newly developed porous glass, nanochannel glass, was used to fabrica te uniform, high-density GaAs and InAs micro- and nanowires with high aspect ratios. The fabrication process utilized reactions between orga nogallium and organoindium compounds with arsine to produce polycrysta lline GaAs and InAs with crystallite sizes of approximately 50-130 Ang strom when annealed at 400-500 degrees C. At the higher annealing temp eratures, the InAs wires exhibited an increase in surface porosity and grain size, whereas the GaAs wires maintained a uniform, smooth textu re. (C) 1996 American Institute of Physics.