DOUBLE INJECTION AND NEGATIVE-RESISTANCE IN STRIPE-GEOMETRY OXIDE-APERTURE ALYGA1-YAS-GAAS-INXGA1-XAS QUANTUM-WELL HETEROSTRUCTURE LASER-DIODES

Data are presented demonstrating double injection and negative resista nce in stripe-geometry oxide-aperture AlyGa1-yAs-GaAs-InxGa1-xAs quant um well heterostructure lasers. The buried oxide laser structures are defined, in current and cavity, by laterally oxidizing the higher Al c omposition upper and lower cladding layers from a mesa edge (a ridge), thus, forming a narrow oxide-defined buried aperture (similar to 2 mu m). Post fabrication annealing (425 degrees C in N-2) removes the neg ative resistance, indicating that the crystal growth and oxidation pro cesses introduce products such as H and OH in the active region that c ompensate the dopants. (C) 1996 American Institute of Physics.