VISIBLE PHOTOLUMINESCENCE FROM PRESSURE ANNEALED INTRINSIC CZOCHRALSKI-GROWN SILICON

Visible luminescence from thermal treated intrinsic Czochralski-grown silicon is reported. Oxygen precipitates were formed in a nearly overs aturated silicon by a two-step thermal treatment with auxiliary use of high pressures. A wide photoluminescence band peaked at about 2.3 eV is observed in those samples for which the first treatment was perform ed at a relatively high temperature and which show a higher amount of oxygen precipitates and oxygen related defects. Scanning electron micr oscopy of the best performing samples show the presence of submicron c onglomerates on the surface. We have tentatively attributed the lumine scence emission to the defects in the suboxide SiOx phase formed in th e oxygen precipitates. (C) 1996 American Institute of Physics.