GROWTH OF YBA2CU3O7-DELTA-AG THIN-FILMS (T-C(0)=89 K) BY PULSED-LASERABLATION ON POLYCRYSTALLINE BA2LANBO6 - A NEW PEROVSKITE CERAMIC SUBSTRATE

Citation
J. Kurian et al., GROWTH OF YBA2CU3O7-DELTA-AG THIN-FILMS (T-C(0)=89 K) BY PULSED-LASERABLATION ON POLYCRYSTALLINE BA2LANBO6 - A NEW PEROVSKITE CERAMIC SUBSTRATE, Applied physics letters, 69(19), 1996, pp. 2909-2911
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
69
Issue
19
Year of publication
1996
Pages
2909 - 2911
Database
ISI
SICI code
0003-6951(1996)69:19<2909:GOYT(K>2.0.ZU;2-G
Abstract
Synthesis and characterization of Ba2LaNbO6 which is a new substrate m aterial for YBa2Cu3O7-delta superconductor are reported. Ba2LaNbO6 has a complex cubic perovskite structure (A(2)BB'O-6) with a lattice cons tant a=8.60 Angstrom. No detectable chemical reaction between YBa2Cu3O 7-delta and Ba2LaNbO6 was observed even under severe heat treatment. T he] dielectric constant and loss factor of Ba2LaNbO6 are in a range su itable for its use as a substrate for microwave applications. Supercon ducting YBa2Cu3O7-delta-Ag thin films are grown in situ on polycrystal line Ba2LaNbO6 by pulsed laser ablation method. The film exhibited (00 l) orientation of an orthorhombic YBa2Cu3O7-delta phase. The films gav e a T-c onset of 91 K and T-c(0) of 89 K. (C) 1996 American Institute of Physics.