PROPERTIES OF DX CENTER IN TE-DOPED IN1-XGAXASYP1-Y GAAS0.61P0.39/

We report that the Te donor forms a deep level and acts as a DX center in In1-xGaxAsyP1-y/GaAs0.61P0.39. The characteristics of Te-related d eep level is investigated by deep-level transient spectroscopy and the rmally stimulated capacitance measurements. The deep level has a therm al activation energy of 0.14+/-0.01 ev regardless of the alloy composi tion of In1-xGaxAsyP1-y. Persistent photoconductivity is observed at l ow temperature in all Te-doped In1-xGaxAsyP1-y/GaAs0.61P0.39 samples. The compositional dependence of deep trap density is explained by ener gy difference between the conduction band minimum and the DX level. (C ) 1996 American Institute of Physics.