A MICROELECTROMECHANICAL-BASED MAGNETOSTRICTIVE MAGNETOMETER

Citation
R. Osiander et al., A MICROELECTROMECHANICAL-BASED MAGNETOSTRICTIVE MAGNETOMETER, Applied physics letters, 69(19), 1996, pp. 2930-2931
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
69
Issue
19
Year of publication
1996
Pages
2930 - 2931
Database
ISI
SICI code
0003-6951(1996)69:19<2930:AMMM>2.0.ZU;2-9
Abstract
The principles of operation of a microelectromechanical (MEMS)-based m agnetometer designed on the magnetoelastic effect are described. The a ctive transduction element is a commercial (001) silicon microantileve r coated with an amorphous thin film of the giant magnetostrictive all oy Terfenol-D [(Dy0.7Te0.3)Fe-2]. In addition to the magnetostrictive transducer, basic components of the magnetometer include: (a) mechanic al resonance of the coated-microantilever through coupling to an ac ma gnetic field; and (b) detection by optical beam deflection of the micr ocantilever motion utilizing a laser diode source and a position-sensi tive detector. Currently, the sensitivity of this MEMs-based magnetost rictive magnetometer is similar to 1 mu T. (C) 1996 American Institute of Physics.