ELECTRICAL MEASUREMENTS OF IODINE-DOPED AMORPHOUS DIAMOND-LIKE FILMS GROWN ON SILICON SUBSTRATE

Citation
M. Allonalaluf et N. Croitoru, ELECTRICAL MEASUREMENTS OF IODINE-DOPED AMORPHOUS DIAMOND-LIKE FILMS GROWN ON SILICON SUBSTRATE, Applied physics letters, 69(19), 1996, pp. 2932-2934
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
69
Issue
19
Year of publication
1996
Pages
2932 - 2934
Database
ISI
SICI code
0003-6951(1996)69:19<2932:EMOIAD>2.0.ZU;2-1
Abstract
By incorporating iodine gas during the films' deposition, amorphous di amondlike carbon (a:DLC) films were doped and a:I-DLC films were obtai ned. Optical measurements showed that iodine affects the optical band gap, decrease it from 1.1 to 0.78 ev. Iodine doping decreased the resi stivity by four orders of magnitude, from 10(8) to 10(4) Omega cm. Iod ine doped film was found to have a larger p doping than a:DLC films. t he I-V characteristics of devices made of doped and undoped films grow n on silicon substrates, were studied, ac measurements of these device s have shown that the p doped a:DLC films behave as semiconductors, an d give a rectification with n-type silicon. (C) 1996 American Institut e of Physics.