M. Allonalaluf et N. Croitoru, ELECTRICAL MEASUREMENTS OF IODINE-DOPED AMORPHOUS DIAMOND-LIKE FILMS GROWN ON SILICON SUBSTRATE, Applied physics letters, 69(19), 1996, pp. 2932-2934
By incorporating iodine gas during the films' deposition, amorphous di
amondlike carbon (a:DLC) films were doped and a:I-DLC films were obtai
ned. Optical measurements showed that iodine affects the optical band
gap, decrease it from 1.1 to 0.78 ev. Iodine doping decreased the resi
stivity by four orders of magnitude, from 10(8) to 10(4) Omega cm. Iod
ine doped film was found to have a larger p doping than a:DLC films. t
he I-V characteristics of devices made of doped and undoped films grow
n on silicon substrates, were studied, ac measurements of these device
s have shown that the p doped a:DLC films behave as semiconductors, an
d give a rectification with n-type silicon. (C) 1996 American Institut
e of Physics.