NO-SENSING PROPERTIES OF AU THIN-FILM

Citation
K. Toda et al., NO-SENSING PROPERTIES OF AU THIN-FILM, Sensors and actuators. B, Chemical, 32(1), 1996, pp. 15-18
Citations number
18
Categorie Soggetti
Electrochemistry,"Chemistry Analytical","Instument & Instrumentation
ISSN journal
09254005
Volume
32
Issue
1
Year of publication
1996
Pages
15 - 18
Database
ISI
SICI code
0925-4005(1996)32:1<15:NPOAT>2.0.ZU;2-Q
Abstract
A gold thin film, connected to a Wheatstone-bridge circuit, acts as an NO gas sensor. The resistance of the gold film increases reversibly i n the presence of 1 to 5 ppm of NO. Better response speed and sensitiv ity are obtained at higher sensor temperatures in the range 100 to 200 degrees C. The optimum thickness of the gold film is 18-30 nm. The go ld thin-film gas sensor can be used to detect parts per million of NO in air without the combined use of any semiconductor material.