We report metal-organic chemical-vapor deposition-grown double heteros
tructure InAsSbP/InAsSb/InAs diode lasers emitting at 3.2 mu m operati
ng at temperatures up to 220 K with threshold current density of 40 A/
cm(2) at 77 K and characteristic temperature up to 42 K. Output powers
as high as 260 mW in pulse mode and 60 mW in continuous wave operatio
n have been obtained from an uncoated 100 mu m stripe-width broad-area
laser at 77 K. Comparison with theory shows that there is no signific
ant nonradiative recombination mechanism for these lasers at 77 K. (C)
1997 American Institute of Physics.