INASSBP INASSB/INAS LASER-DIODES (LAMBDA=3.2 MU-M) GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/

We report metal-organic chemical-vapor deposition-grown double heteros tructure InAsSbP/InAsSb/InAs diode lasers emitting at 3.2 mu m operati ng at temperatures up to 220 K with threshold current density of 40 A/ cm(2) at 77 K and characteristic temperature up to 42 K. Output powers as high as 260 mW in pulse mode and 60 mW in continuous wave operatio n have been obtained from an uncoated 100 mu m stripe-width broad-area laser at 77 K. Comparison with theory shows that there is no signific ant nonradiative recombination mechanism for these lasers at 77 K. (C) 1997 American Institute of Physics.