FERROELECTRIC PROPERTIES OF (PB0.97LA0.03)(ZR0.66TI0.34)O-3 FILMS DEPOSITED ON SI3N4-COATED SI SUBSTRATES BY PULSED-LASER DEPOSITION PROCESS

(Pb0.97La0.03) (Zr0.66Ti0.34)(0.9875)O-3, PLZT, thin films deposited o n either LaNiO3 (LNO) or LNO/Pt coated Si3N4/Si substrates, possessing good ferroelectric properties, were successfully obtained by the puls ed laser deposition process;Using LNO/Pt as double layer electrodes no t only resulted in PLZT films with superior electric properties, but a lso of better handling endurance. The former is attributed to the low surface resistivity of electrode materials (i.e., rho(LNO/Pt)= 0.5 m O mega cm) due to the bypassing effect of the Pt layer, whereas the latt er is ascribed to the induction of compressive stress on PLZT and LNO layers due to a relatively larger thermal expansion coefficient (CTE) of the Pt layer. The ferroelectric properties of (PLZT)(LNO/pt) films were P-r = 16.5 mu C/cm(2) and E(c) = 63.5 kV/cm, while the dielectric constant and leakage current were K=1.028 and J(e) less than or equal to 8X10(-6) A/cm(2) (under 150 kV/cm), respectively. Their fatigue li fe was longer than 2x10(9) cycles under action of 300 kV/cm pulse. (C) 1997 American Institute of Physics.