Tf. Tseng et al., FERROELECTRIC PROPERTIES OF (PB0.97LA0.03)(ZR0.66TI0.34)O-3 FILMS DEPOSITED ON SI3N4-COATED SI SUBSTRATES BY PULSED-LASER DEPOSITION PROCESS, Applied physics letters, 70(1), 1997, pp. 46-48
(Pb0.97La0.03) (Zr0.66Ti0.34)(0.9875)O-3, PLZT, thin films deposited o
n either LaNiO3 (LNO) or LNO/Pt coated Si3N4/Si substrates, possessing
good ferroelectric properties, were successfully obtained by the puls
ed laser deposition process;Using LNO/Pt as double layer electrodes no
t only resulted in PLZT films with superior electric properties, but a
lso of better handling endurance. The former is attributed to the low
surface resistivity of electrode materials (i.e., rho(LNO/Pt)= 0.5 m O
mega cm) due to the bypassing effect of the Pt layer, whereas the latt
er is ascribed to the induction of compressive stress on PLZT and LNO
layers due to a relatively larger thermal expansion coefficient (CTE)
of the Pt layer. The ferroelectric properties of (PLZT)(LNO/pt) films
were P-r = 16.5 mu C/cm(2) and E(c) = 63.5 kV/cm, while the dielectric
constant and leakage current were K=1.028 and J(e) less than or equal
to 8X10(-6) A/cm(2) (under 150 kV/cm), respectively. Their fatigue li
fe was longer than 2x10(9) cycles under action of 300 kV/cm pulse. (C)
1997 American Institute of Physics.