INDUCTIVE-COUPLING-NITROGEN-PLASMA PROCESS FOR SUPPRESSION OF BORON PENETRATION IN BF2-IMPLANTED POLYCRYSTALLINE SILICON GATE()

Authors
CHAO TS CHU CH
Citation
Ts. Chao et Ch. Chu, INDUCTIVE-COUPLING-NITROGEN-PLASMA PROCESS FOR SUPPRESSION OF BORON PENETRATION IN BF2-IMPLANTED POLYCRYSTALLINE SILICON GATE(), Applied physics letters, 70(1), 1997, pp. 55-56
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
1
Year of publication
1997
Pages
55 - 56
Database
ISI
SICI code
0003-6951(1997)70:1<55:IPFSOB>2.0.ZU;2-R
Abstract
A novel and simple method to suppress the boron penetration in the BF2 +-implanted polycrystalline silicon gate is presented by using the ind uctive-coupling-nitrogen-plasma (ICNP) process. A nitrogen layer was f ound at the SiO2/Si interface by using this method. The result shows t hat the sample with the ICNP treatment exhibits a good suppression of boron penetration and improved electrical characteristics. (C) 1997 Am erican Institute of Physics.