A 40-NM-PITCH DOUBLE-SLIT EXPERIMENT OF HOT-ELECTRONS IN A SEMICONDUCTOR UNDER A MAGNETIC-FIELD

Citation
H. Hongo et al., A 40-NM-PITCH DOUBLE-SLIT EXPERIMENT OF HOT-ELECTRONS IN A SEMICONDUCTOR UNDER A MAGNETIC-FIELD, Applied physics letters, 70(1), 1997, pp. 93-95
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
70
Issue
1
Year of publication
1997
Pages
93 - 95
Database
ISI
SICI code
0003-6951(1997)70:1<93:A4DEOH>2.0.ZU;2-3
Abstract
We report a double-slit experiment of hot electrons in a semiconductor under a magnetic field, The pitch of the double slit buried in the se miconductor is 40 nm and the electron energy is of the order of 100 me V. By applying a magnetic field, the change in current that passes thr ough the slits is observed at the segmented collector. The measured cu rrent shows a clear minimum around B=0 T, with this behavior agreeing with a theoretical calculation based on double-slit interference. Quan titative estimation is consistent with this order of current variation . We think that these results show evidence of the observation of hot electron interference by a double slit in a semiconductor (C) 1997 Ame rican Institute of Physics.