EFFECT OF INDIRECT GAMMA-L AND GAMMA-X TRANSFER ON THE CARRIER DYNAMICS OF INGAP INALP MULTIPLE-QUANTUM WELLS/

Citation
Cs. Menoni et al., EFFECT OF INDIRECT GAMMA-L AND GAMMA-X TRANSFER ON THE CARRIER DYNAMICS OF INGAP INALP MULTIPLE-QUANTUM WELLS/, Applied physics letters, 70(1), 1997, pp. 102-104
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
70
Issue
1
Year of publication
1997
Pages
102 - 104
Database
ISI
SICI code
0003-6951(1997)70:1<102:EOIGAG>2.0.ZU;2-G
Abstract
Indirect Gamma-L scattering within the well, and real space carrier tr ansfer to the barrier X(1c) states are shown to significantly affect t he carrier dynamics in In0.48Ga0.52P/In0.5Al0.5P multiple quantum well s. When carriers transfer to the indirect states occurs, the carrier d ynamics is modified by the slow return of the carriers from the low mo bility states to the well. As a result, the absorption recovery time i ncreases by almost an order of magnitude. Carrier transfer to the indi rect states also increases the carrier lifetime to values characterist ic of indirect recombination. (C) 1997 American Institute of Physics.