EFFECT OF INDIRECT GAMMA-L AND GAMMA-X TRANSFER ON THE CARRIER DYNAMICS OF INGAP INALP MULTIPLE-QUANTUM WELLS/

Indirect Gamma-L scattering within the well, and real space carrier tr ansfer to the barrier X(1c) states are shown to significantly affect t he carrier dynamics in In0.48Ga0.52P/In0.5Al0.5P multiple quantum well s. When carriers transfer to the indirect states occurs, the carrier d ynamics is modified by the slow return of the carriers from the low mo bility states to the well. As a result, the absorption recovery time i ncreases by almost an order of magnitude. Carrier transfer to the indi rect states also increases the carrier lifetime to values characterist ic of indirect recombination. (C) 1997 American Institute of Physics.