TI AND CA SUBSTITUTION IN SRRUO3 THIN-FILMS BY SEQUENTIAL DEPOSITION PROCESS

Citation
L. Mieville et al., TI AND CA SUBSTITUTION IN SRRUO3 THIN-FILMS BY SEQUENTIAL DEPOSITION PROCESS, Applied physics letters, 70(1), 1997, pp. 126-128
Citations number
21
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
70
Issue
1
Year of publication
1997
Pages
126 - 128
Database
ISI
SICI code
0003-6951(1997)70:1<126:TACSIS>2.0.ZU;2-X
Abstract
We report on the growth and properties of (Sr1-xCax)RuO3 and Sr (Ru1-x Tix)O-3 thin films obtained by sequential deposition of submonolayers from end members of each compound. Magnetization measurements as well as transport properties exhibit a very different behavior for each typ e of substitution. A simple model, which assumes a random distribution of the substituted sites, allows us to account quantitatively for the reduction of the magnetization with increased doping and further conf irms the homogeneity of our samples, A strong distortion due to the pr esence of the Ti on the Ru site could explain the different behavior o bserved between both types of doping. (C) 1997 American Institute of P hysics.