FATIGUE RESISTANCE IN LEAD-ZIRCONATE-TITANATE THIN FERROELECTRIC-FILMS - EFFECT OF CERIUM DOPING AND FREQUENCY-DEPENDENCE

Citation
Sb. Majumder et al., FATIGUE RESISTANCE IN LEAD-ZIRCONATE-TITANATE THIN FERROELECTRIC-FILMS - EFFECT OF CERIUM DOPING AND FREQUENCY-DEPENDENCE, Applied physics letters, 70(1), 1997, pp. 138-140
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
70
Issue
1
Year of publication
1997
Pages
138 - 140
Database
ISI
SICI code
0003-6951(1997)70:1<138:FRILTF>2.0.ZU;2-Y
Abstract
We demonstrate improvement in fatigue resistance and other ferroelectr ic properties through cerium doping in sol-gel derived lead zirconate titanate thin films. We have studied frequency dependence of fatigue b ehavior and show that the loss of polarization due to fatigue follows a universal scaling behavior with N/f(2), where N is the number of swi tching cycles and f the frequency. The origin of the scaling is attrib uted to the drift of oxygen vacancies, which is the rate limiting proc ess in the growth of the interface layer responsible for fatigue. Empi rical fits for both undoped and cerium-doped samples show that switcha ble polarization follows stretched exponential decay with time or N/f. Cerium doping is shown to improve fatigue resistance by impeding the motion of oxygen vacancies. (C) 1996 American Institute of Physics.