ROOM-TEMPERATURE PULSED OPERATION OF NITRIDE BASED MULTI-QUANTUM-WELLLASER-DIODES WITH CLEAVED FACETS ON CONVENTIONAL C-FACE SAPPHIRE SUBSTRATES

We demonstrate room temperature pulsed operation of nitride based mult i-quantum-well (MQW) laser diodes with cleaved mirror facets grown on a conventional C-face sapphire substrate. Cleavage was performed along the [<11(2)over bar 0>] direction of the sapphire substrate, and the resultant facet was analyzed using an atomic force microscope (AFM) an d theoretical calculation. A single peak emisson, at a wavelength of 4 17.5 nm, with a full width at half-maximum of 0.15 nm, was obtained. T he threshold current density of the laser was 50 kA/cm(2) and a voltag e for the threshold current was 20 V.