PREPARATION OF LEAD-ZIRCONATE-TITANATE THIN-FILMS BY REACTIVE MAGNETRON COSPUTTERING

A reactive magnetron co-sputtering method with multiple metal targets was used to prepare lead zirconate titanate films, with Zr/Ti ratios o f 85/15, 52/48 and 30/70. The lead content was also varied. Films depo sited on platinum coated silicon substrates followed by rapid thermal annealing crystallized in the perovskite structure at 600 degrees C an d showed (100) preferred orientation. The effects of Pb content in the films and Zr/Ti ratio on structural and electrical properties were in vestigated. Ti rich PZT films showed larger polarizations and higher c oercive fields. Films which were nearly fatigue-free up to 10 [9] fati gue cycles have been prepared. Monitoring the operating voltage, curre nt and power of the Pb target, and oxygen control during deposition we re found to be important in the preparation of high quality PZT films.