RADIATION EFFECTS OF ION AND ELECTRON-BEAMS ON POLY(METHYLPHENYLSILANE)

Authors
SEKI S SHIBATA H BAN H ISHIGURE K TAGAWA S
Citation
S. Seki et al., RADIATION EFFECTS OF ION AND ELECTRON-BEAMS ON POLY(METHYLPHENYLSILANE), Radiation physics and chemistry, 48(5), 1996, pp. 539-544
Citations number
24
Categorie Soggetti
Nuclear Sciences & Tecnology","Chemistry Physical","Physics, Atomic, Molecular & Chemical
Journal title
Radiation physics and chemistry → ACNP
ISSN journal
0969806X
Volume
48
Issue
5
Year of publication
1996
Pages
539 - 544
Database
ISI
SICI code
0969-806X(1996)48:5<539:REOIAE>2.0.ZU;2-Z
Abstract
Radiation effects of ion beams on poly(methylphenylsilane), PMPS are d escribed in the present paper. PMPS solid films irradiated by high ene rgy H+, He+, N+ ion beams and electron beams show changes of solubilit y with a large LET effects. Ion (2 MeV) and electron (20 and 30 keV) b eams induce mainly crosslinking of PMPS, while it was reported that UV light and gamma-rays caused predominantly main chain scission on PMPS . The G-values of crosslinking increase with the values of LET of inci dent beams. Copyright (C) 1996 Published by Elsevier Science Ltd