BISTABLE MAGNETIC-RESONANCE OF CONDUCTION ELECTRONS IN SOLIDS

The phenomenon of bistable hysteresis in magnetic resonance of conduct ion electrons in solids is discussed, particularly the case of gallium oxide beta-Ga2O3. This memory effect is a consequence of the dynamic polarization of nuclei by the Overhauser effect and manifests itself b y a hysteresis of the ESR line provided that particular conditions for the external (or control) and internal (or material) parameters are s atisfied. The influence of all these parameters on bistability is stud ied in detail. it is shown that magnetic resonance of conduction elect rons in solids containing nonzero nuclear spins is an intrinsically bi stable phenomenon. The reasons why bistability is so strong in gallium oxide even at room temperature, compared to other identified compound s where bistability exists only at very low temperature, are discussed ill terms of electronic and crystallographic structure.