Ha. Yu et al., THE JUNCTION CHARACTERISTICS OF CARBONACEOUS FILM N-TYPE SILICON (C/N-SI) LAYER PHOTOVOLTAIC CELL/, Applied physics letters, 69(20), 1996, pp. 3042-3044
The junction capacitance for a carbonaceous thin-film/n-type silicon l
ayer photovoltaic cell made by chemical vapor deposition of 2,5-dimeth
yl-p-benzoquinone on a silicon substrate at 500 degrees C was measured
, and an energy band diagram for this junction was sought out, The res
ult confirms that the carbonaceous thin-film/n-type silicon junction i
s a heterotype junction. Its junction barrier is about 0.54 eV. This j
unction shows a depletion laver of about 1.1 mu m in thickness at zero
bias voltage, and most all of which was established in the silicon su
bstrate. A work function of about 5.0 eV for the carbonaceous film was
estimated based on the energy-band diagram of this junction. (C) 1996
American Institute of Physics.