Pk. Hucknall et al., ION-SCATTERING FOR IN-SITU CHARACTERIZATION OF COMPOSITION OF LA2-XSRXCUO4 FILMS, Applied physics letters, 69(20), 1996, pp. 3081-3083
Ion scattering techniques in the 5-50 keV range have the potential to
yield quantitative information on the composition of high-temperature
superconductor (HTc) films. To demonstrate this we have designed and b
uilt an ion scattering spectrometer, compact enough for in situ use, a
s an analytical tool for Vacuum deposition processes. Data collected f
rom La2-xSrxCuO4 films demonstrate the excellent mass resolution avail
able using heavy incident ions. Modeling of the data has been carried
out using both a simple empirical method and a full Monte Carlo code.
In addition to stoichiometric information, the contribution of light r
ecoiled elements to the spectrum is determined. The estimated composit
ion, based on these models is compared with the composition obtained u
sing high energy Rutherford backscattering spectrometry (RES) to verif
y the quantitative capabilities of the technique. (C) 1996 American In
stitute of Physics.