ION-SCATTERING FOR IN-SITU CHARACTERIZATION OF COMPOSITION OF LA2-XSRXCUO4 FILMS

Citation
Pk. Hucknall et al., ION-SCATTERING FOR IN-SITU CHARACTERIZATION OF COMPOSITION OF LA2-XSRXCUO4 FILMS, Applied physics letters, 69(20), 1996, pp. 3081-3083
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
69
Issue
20
Year of publication
1996
Pages
3081 - 3083
Database
ISI
SICI code
0003-6951(1996)69:20<3081:IFICOC>2.0.ZU;2-C
Abstract
Ion scattering techniques in the 5-50 keV range have the potential to yield quantitative information on the composition of high-temperature superconductor (HTc) films. To demonstrate this we have designed and b uilt an ion scattering spectrometer, compact enough for in situ use, a s an analytical tool for Vacuum deposition processes. Data collected f rom La2-xSrxCuO4 films demonstrate the excellent mass resolution avail able using heavy incident ions. Modeling of the data has been carried out using both a simple empirical method and a full Monte Carlo code. In addition to stoichiometric information, the contribution of light r ecoiled elements to the spectrum is determined. The estimated composit ion, based on these models is compared with the composition obtained u sing high energy Rutherford backscattering spectrometry (RES) to verif y the quantitative capabilities of the technique. (C) 1996 American In stitute of Physics.