SYNTHESIS OF GALLIUM CHALCOGENIDE CUBANES AND THEIR USE AS CVD PRECURSORS FOR GA(2)E(3) (E=S, SE)

The gallium-chalcogen heterocubanes [CpGa(mu(3)-E)](4), E = S (1) and Se (2), and [Cp(+)Ga(mu(3)-Se)](4) (3) have been synthesized by dehal osilylation reactions between E(SiMe(3))(2) (E = S, Se) and RGaCl(2), R = Cp(C(5)Me(5)) and Cp(+) (C(5)Me(4)Et), and are characterized by e lemental analyses, NMR spectroscopy, and mass spectrometry. The use of compounds 1 and 2 as single-source MOCVD precursors for the low-tempe rature growth of Ga(2)E(3) films at 290-310 degrees C is described. Th e as-deposited films were amorphous; however, upon thermal annealing ( 500 degrees C) the films crystallized to the thermodynamic cubic phase s, while the corresponding tellurium analog decomposed in the solid st ate at 220 degrees C forming a gallium-rich product.