A 98 MM(2) DIE SIZE 3.3-V 64-MB FLASH MEMORY WITH FN-NOR TYPE 4-LEVELCELL

In order to realize high-capacity and low-cost flash memory, we have d eveloped a 64-Mb hash memory with multilevel cell operation scheme, Th e 64-Mb flash memory has been Select achieved in a 98 mm(2) die size b y using four-level per cell operation scheme, NOR type cell array, and 0.4-mu m CMOS technology, Using an FN type program/erase cell allows a single Word 3.3 V supply voltage. In order to establish fast program ming operation using Fowler-Nordheim (FN)-NOR type memory cell, we hav e developed a highly parallel multilevel programming technology, The d rain voltage controlled multilevel programming (DCMP) scheme, the para llel multilevel verify (PMV) circuit, and the compact multilevel sense -amplifier (CMS) have been implemented to achieve 128 b parallel progr amming and 6.3 mu s/Byte programming speed.