ELECTRICAL-TRANSPORT PROPERTIES OF (CD,ZN)S THIN-FILMS

The chemical deposition of Cd1-XZnXS (0 less than or equal to X less t han or equal to 0.9) thin films onto the glass substrates and their el ectrical characterisations are presented in this paper. The temperatur e dependence of an electrical conductivity (sigma), thermoelectric pow er (p), carrier concentration (n) and mobility (mu) have been studied and influence of the Zn-concentration on them is explained in terms of Petritz model, wherein the scattering is due to the grain boundaries of the crystallites, The effect of Zn-concentration on activation ener gies of conductivity (E(a sigma)) and electron density (E(an)), the po tential barrier height of grain boundary (Phi(B)) and the grain dimens ion (d) is also reported. The results indicate that the electrical tra nsport properties of chemically deposited (Cd, Zn)S films are governed by the intergrain barrier height, which is sensitively dependent on t he temperature and Zn-concentration.