ELECTRON-STATES AT A SOLID C-60 SI(111) INTERFACE/

Electron stares at a solid C-60/Si(111) interface have been studied by the deep-level transient spectroscopy (DLTS) technique. An electron t rap, E(it)(0.31), and three hole traps, H-it1(0.27), H-it2(0.36) and H -it3(0.47), exist at the solid C-60/Si interface. H-it1 and E(it) are the dominant deep levels with densities of the order of magnitude 10(1 1) cm(-2), and both of them probably originate from the dangling bonds on silicon(lll) surfaces. The fact that the density of the interface states at the C-60/Si(111) interface is low indicates that C-60 passiv ates the Si surface.