SELECTIVE-AREA IMPURITY-DOPED PLANAR EDGE-COUPLED WAVE-GUIDE PHOTODIODE (SIMPLE-WGPD) FOR LOW-COST, LOW-POWER-CONSUMPTION OPTICAL HYBRID MODULES

The authors propose two novel designs of a waveguide photodiode for ac cess networks; one is a planar waveguide conjunction with impurity dif fusion to simplify the fabrication process and the other is an intenti onally p-type doped photoabsoption layer to lower the operating voltag e. Without degrading the efficiency, the fabricated device has a bandw idth of 500 MHz at 1 V and 250 MHz even at 0 V.