THE INDENTATION RESPONSE OF GAAS-ALAS HETEROSTRUCTURES

Authors
CASTELL MR SHAFIRSTEIN G RITCHIE DA
Citation
Mr. Castell et al., THE INDENTATION RESPONSE OF GAAS-ALAS HETEROSTRUCTURES, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 74(5), 1996, pp. 1185-1194
Citations number
16
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter","Metallurgy & Metallurigical Engineering
Journal title
Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties → ACNP
ISSN journal
13642804
Volume
74
Issue
5
Year of publication
1996
Pages
1185 - 1194
Database
ISI
SICI code
1364-2804(1996)74:5<1185:TIROGH>2.0.ZU;2-V
Abstract
Low-load indentation has been used to investigate the deformation beha viour of a submicron layer of AlAs on a GaAs substrate. High-resolutio n scanning electron microscopy of cross-sections through the deformed regions under indentations into this structure reveals that the softer AlAs layer is not penetrated by the indenter and that unusual lateral cracking originates during the unloading phase. Data of intendation l oad against depth demonstrates the effect of the layer through the inc rease in composite hardness and elastic modulus with increasing load.