Gv. Gadiyak et al., EFFECT OF COMPETING TRAPPING CENTERS (SINKS) ON THE EVOLUTION OF IMPLANTED-NITROGEN DISTRIBUTION IN SILICON - A NUMERICAL-SIMULATION, Semiconductors, 30(11), 1996, pp. 1019-1023
Numerical simulation was used to show that the experimentally observed
complex distribution of an implanted impurity is due to the appearanc
e of several competing trapping centers (sinks) for mobile atoms. Thes
e trapping centers lie near the maxima of the range and elastic loss d
istributions, and also sinks that are initially present in the medium.
The relative roles of the sinks are found to vary during implantation
, which leads to the evolution of the impurity distribution. Experimen
tal data on high-temperature implantation of N+ ions in silicon were f
ound to be in good agreement with the evolution of the numerically sim
ulated distributions, based on the existing information on the behavio
r of nitrogen and defects in silicon. (C) 1996 American Institute of P
hysics.