EFFECT OF COMPETING TRAPPING CENTERS (SINKS) ON THE EVOLUTION OF IMPLANTED-NITROGEN DISTRIBUTION IN SILICON - A NUMERICAL-SIMULATION

Citation
Gv. Gadiyak et al., EFFECT OF COMPETING TRAPPING CENTERS (SINKS) ON THE EVOLUTION OF IMPLANTED-NITROGEN DISTRIBUTION IN SILICON - A NUMERICAL-SIMULATION, Semiconductors, 30(11), 1996, pp. 1019-1023
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
30
Issue
11
Year of publication
1996
Pages
1019 - 1023
Database
ISI
SICI code
1063-7826(1996)30:11<1019:EOCTC(>2.0.ZU;2-P
Abstract
Numerical simulation was used to show that the experimentally observed complex distribution of an implanted impurity is due to the appearanc e of several competing trapping centers (sinks) for mobile atoms. Thes e trapping centers lie near the maxima of the range and elastic loss d istributions, and also sinks that are initially present in the medium. The relative roles of the sinks are found to vary during implantation , which leads to the evolution of the impurity distribution. Experimen tal data on high-temperature implantation of N+ ions in silicon were f ound to be in good agreement with the evolution of the numerically sim ulated distributions, based on the existing information on the behavio r of nitrogen and defects in silicon. (C) 1996 American Institute of P hysics.