KINETICS OF FORMATION AND DISSOCIATION OF RADIATION-PLUS-ANNEALING INDUCED VASZNGA PAIRS IN P-TYPE GAAS(ZN)

The influence of electron irradiation with dose phi=10(16) cm(-2) and subsequent annealing (at temperatures T=150-350 degrees C for times t= 10-600 min) of p-type GaAs[Zn] crystals on the formation and dissociat ion of VAsZnGa pairs has been studied. An analysis of the kinetics of formation and dissociation of VAsZnGa pairs allowed us to determine th e diffusion coefficient D of radiation-induced arsenic vacancies D (D= 1.5x10(-18), 1x10(-17), and 5x10(-17) cm(2)/s at 150, 175, and 200 deg rees C, respectively), the activation energy epsilon(m) of their diffu sion process (epsilon(m)=1.1 eV), and also the dissociation energy eps ilon(d) of these vacancies (epsilon(d)=1.6 eV). (C) 1996 American Inst itute of Physics.