A LARGE-RADIUS POLARON IN SEMICONDUCTOR-BASED NANOSTRUCTURES WITH NONPARABOLIC DISPERSION

Polaron effects in quantum wells have been investigated theoretically in narrow-gap semiconductors with high ionicity. It is shown that nonp arabolic behavior of the band spectrum leads to a difference in polaro n binding energies for various levels of quantum size effect. The Stok es losses have been determined for interlevel electronic transitions. These losses were parametrically higher than those in materials with p arabolic dispersion. These results may be used for optical analysis of the nonparabolic behavior of the carrier spectrum. (C) 1996 American Institute of Physics.