SB OR CS COVERED INAS(110) SURFACES - MOVING E(F) INTO CONDUCTION-BAND AND QUANTIZED 2D ELECTRON CHANNEL

With the study of the formation of Sb/InAs interface by synchrotron ra diation photoemission, we add a new piece of evidence that a two-dimen sional free electron gas can be created at room temperature, on the (1 10) cleaved surface of InAs upon adsorption of few metal atoms. In the case of Cs, we demonstrate that this very interesting feature results from 2D channels quantized in the direction normal to the surface.