THE ATOMIC-STRUCTURE OF THE SI(111) (2-ROOT-3X2-ROOT-3)R30-DEGREES-SNRECONSTRUCTION

Authors
LEVERMANN AH HOWES PB EDWARDS KA ANYELE HT MATTHAI CC MACDONALD JE FEIDENHANSL R LOTTERMOSER L SEEHOFER L FALKENBERG G JOHNSON RL
Citation
Ah. Levermann et al., THE ATOMIC-STRUCTURE OF THE SI(111) (2-ROOT-3X2-ROOT-3)R30-DEGREES-SNRECONSTRUCTION, Applied surface science, 104, 1996, pp. 124-129
Citations number
12
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
104
Year of publication
1996
Pages
124 - 129
Database
ISI
SICI code
0169-4332(1996)104:<124:TAOTS(>2.0.ZU;2-L
Abstract
We have studied the atomic structure of the (2 root 3x2 root)R30 degre es reconstruction induced by adsorption of about 1.1 monolayers of Sn on Si(lll) using surface X-ray diffraction (SXRD) and scanning tunnell ing microscopy (STM). The experimentally obtained structure factors in SXRD are in contradiction with existing models in the literature and we conclude the need for a new surface atomic structure model. We have been able to determine a number of properties of an appropriate surfa ce model to allow a better fit to the experimental structure factors.