SCHOTTKY-BARRIER FORMATION AT PASSIVATED SURFACES - COVALENT AND IONIC SEMICONDUCTORS

Authors
SAIZPARDO R RINCON R DEANDRES PL FLORES F
Citation
R. Saizpardo et al., SCHOTTKY-BARRIER FORMATION AT PASSIVATED SURFACES - COVALENT AND IONIC SEMICONDUCTORS, Applied surface science, 104, 1996, pp. 183-187
Citations number
20
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
104
Year of publication
1996
Pages
183 - 187
Database
ISI
SICI code
0169-4332(1996)104:<183:SFAPS->2.0.ZU;2-G
Abstract
Schottky-barrier heights can be modified by passivation of semiconduct or surfaces and the resulting change in the metal-semiconductor intera ction. We present theoretical calculations for two different semicondu ctors: Si and GaAs passivated with Sb. Passivation of GaAs(110) surfac es introduces ohmic contacts, while Si(111) presents smaller changes i n its barrier height. These results are similar to the ones previously found for the same semiconductor surfaces passivated with H.