C. Coluzza et al., SPATIALLY-RESOLVED INTERNAL AND EXTERNAL PHOTOEMISSION OF PT N-GAP SCHOTTKY-BARRIER/, Applied surface science, 104, 1996, pp. 196-203
Citations number
16
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
We studied the Pt/n-GaP buried Schottky junction by several spatially
resolved techniques to correlate the chemical inhomogeneities of the i
nterface with the spatial variations of the diode transport properties
, The recombination rate fluctuations and small spatial variations (3-
8 meV) of the Schottky barrier height were correlated with the local s
toichiometry of the bare GaP surface and of the fully formed junction,
We discovered regions with local segregation of metallic gallium, In
these regions we measured a Schottky barrier height only 4 meV lower t
han in the stoichiometric areas, On the contrary these zones presented
a more important electron-hole recombination rate.