SPATIALLY-RESOLVED INTERNAL AND EXTERNAL PHOTOEMISSION OF PT N-GAP SCHOTTKY-BARRIER/

We studied the Pt/n-GaP buried Schottky junction by several spatially resolved techniques to correlate the chemical inhomogeneities of the i nterface with the spatial variations of the diode transport properties , The recombination rate fluctuations and small spatial variations (3- 8 meV) of the Schottky barrier height were correlated with the local s toichiometry of the bare GaP surface and of the fully formed junction, We discovered regions with local segregation of metallic gallium, In these regions we measured a Schottky barrier height only 4 meV lower t han in the stoichiometric areas, On the contrary these zones presented a more important electron-hole recombination rate.