A NORMAL INCIDENCE X-RAY STANDING-WAVE STUDY OF SULFUR ADSORPTION ON INP(110)

Authors
JOHAL TK FINETTI P DHANAK VR ROBINSON AW PATCHETT A ZAHN DRT MCGRATH R
Citation
Tk. Johal et al., A NORMAL INCIDENCE X-RAY STANDING-WAVE STUDY OF SULFUR ADSORPTION ON INP(110), Applied surface science, 104, 1996, pp. 257-261
Citations number
32
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
104
Year of publication
1996
Pages
257 - 261
Database
ISI
SICI code
0169-4332(1996)104:<257:ANIXSS>2.0.ZU;2-6
Abstract
A normal incidence X-ray standing wave (NIXSW) study of room temperatu re in-situ S adsorption on InP(110) is described. The S atom XSW profi le was measured by detecting S 1s photoemission yield for the (220) Br agg reflection. The average perpendicular distance of the S atoms from the InP(110) surface was determined to be 1.95 +/- 0.02 Angstrom. The coherent fraction f(c) was found to be 0.67 +/- 0.02, which upon anne aling to 270 degrees C increased to 0.82 +/- 0.02. A (1 x 1) low energ y diffraction (LEED) pattern was observed in all cases. Models for the adsorption geometry are discussed.