THE INITIAL OXIDATION OF SILICON - NEW ION-SCATTERING RESULTS IN THE ULTRA-THIN REGIME

We present new results on the SiO2/Si system obtained by high resoluti on medium energy ion scattering. Isotopic labeling experiments demonst rate that the traditional Deal Grove and related models fail for sub-1 0 nm films. Any realistic model in this ultra-thin film region should include near-interfacial and surface exchange reactions. We also obser ved that the surface can be roughened during oxidation. Simple models explaining the genesis of roughness during active oxidation and in a t ransition regime between active and passive oxidation are given, based on relative rates of various surface processes.