STUDIES ON LOW-TEMPERATURE SILICON GRAIN-GROWTH ON SIO2 BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION

Authors
WANG KC HWANG HL LOFERSKI JJ YEW TR
Citation
Kc. Wang et al., STUDIES ON LOW-TEMPERATURE SILICON GRAIN-GROWTH ON SIO2 BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION, Applied surface science, 104, 1996, pp. 373-378
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
104
Year of publication
1996
Pages
373 - 378
Database
ISI
SICI code
0169-4332(1996)104:<373:SOLSGO>2.0.ZU;2-I
Abstract
Electron cyclotron resonance chemical vapor deposition has resulted in poly-Si films with grains of one micron dimension by using the hydrog en dilution method. The crystalline fraction of the poly-Si film is al most 100% as determined from analysis of Raman spectra. The poly-Si fi lms have preferred [111] and [110] orientations according to their XRD spectra. The hydrogen content of the poly-Si films is less than 0.8%. A simple model of grain formation is proposed to explain grain growth in the electron cyclotron resonance chemical vapor deposition deposit ed poly-Si films.