HYDROGEN-ION TREATMENTS OF OXIDIZED GAAS(100) AND ALGAAS(100) SURFACES - SURFACE STOICHIOMETRY AND ELECTRONIC-PROPERTIES

Near-surface GaAs/AlGaAs quantum wells, with and without a GaAs cap, h ave been used as effective probes of the electronic properties of oxid ized GaAs surfaces and AlGaAs surfaces, We find that the variation of surface stoichiometry due to hydrogen ion treatments appears to be sim ilar for both oxidized AlGaAs and GaAs surfaces, as examined by Auger electron spectroscopy. However, the composition of the oxide significa ntly affects both hydrogenation process and the efficacy of surface pa ssivation.