MOCVD GROWTH OF GA2SE3 ON GAAS(100) AND GAP(100) - A RAMAN-STUDY

Due to its luminescence in the blue-green spectral range, Ga2Se3 has b ecome a subject of extensive research. Thin epitaxial Ga2Se3 layers we re grown on GaAs(100) and GaP(100) for the first time by metalorganic chemical vapour deposition (MOCVD). The structural and optical propert ies were investigated by transmission electron microscopy, Raman spect roscopy and photoluminescence (PL). Raman spectra were taken in a temp erature range from 100 K to 600 K using excitation energies of Ar+ and Kr+ ion lasers. Additionally the photoluminescence of the layers was measured using ultraviolet (UV) excitation. The results of this study are compared and discussed with those of other growth techniques.