STM STUDY OF THE ORGANIC SEMICONDUCTOR PTCDA ON HIGHLY-ORIENTED PYROLYTIC

Monolayer and multilayer films of the archetype organic semiconductor 3,4,9,10-perylenetetracarboxylic dianhydride are deposited at room tem perature in ultrahigh vacuum on freshly cleaved highly-oriented pyroly tic graphite (HOPG) and analyzed by scanning tunneling microscopy (STM ). STM images of monolayer films show a 'herringbone' structure with t wo molecules per unit cell and dimensions which are in good agreement with prior studies. High-resolution STM images acquired under a variet y of bias voltages indicate an electronic inequivalence of the two mol ecules within the unit cell. Although the image of the most prominent of these molecules resembles a figure eight over a wide range of sampl e biases, a difference in shape between filled and empty states appear s at the smallest bias voltages. These differences are compared to mol ecular orbital calculations for the highest occupied and lowest unoccu pied molecular orbitals of an isolated molecule and found to correlate rather well. Moire fringes are observed with much larger periodicity than those previously reported by Ludwig et al., and can be explained by the incommensurate nature of the overlayer, which grows quasi-epita xially, constrained mostly by the symmetry of the substrate. The first reported results of STM on multilayer films is presented showing crys talline domains in multiples of 60 degrees. the rotational symmetry of the HOPG (0001) surface. In most cases, edges of these domains are ob served to preferentially align along the a-axis of the unit cell. Fina lly, given this evidence of stable tunneling with molecular resolution on monolayer and multilayer films, mechanisms for STM image contrast on PTCDA films are discussed.