CHARGE-TRANSFER AND ELECTRONIC ACTIVATION AT AN SB DELTA-LAYER IN SI(001)

Thin sheets of dopant atoms (delta-layers) have been shown to give unp recedented microscopic control over interfaces between semiconductors, though there exists very little understanding of the fundamental chan ges in the electronic structure in the vicinity of the delta-doped lay er. Recent work in electron spectroscopy has shown that the combinatio n of environmentally determined photoelectron and Auger electron shift s within the Auger parameter can provide insight into the differences in local electron screening and charge transfer. in this work, we appl y the technique to the study of Sb delta-layers in epitaxially grown S i(001) and have been able to determine for the first time using spectr oscopic techniques the existence of two different environments for Sb in Si, and that only 17% of the donor atoms are electrically active.