INTERFACE ABRUPTNESS IN STRAINED III-V HETEROSTRUCTURES

Highly strained In0.53Ga0.47As/InAs/In0.53Ga0.47As heterostructures an d InAs layers were grown on InP (100) substrates by using molecular be am epitaxy (MBE). The samples have been investigated by means of selec ted-area X-ray spectroscopy (SAXPS) combined with low energy ion sputt ering. The heterointerface widths in the In0.53Ga0.47As/InAs/In0.53Ga0 .47As samples grown under diverse MBE conditions (standard and virtual surfactant) have been analysed, The thickness of the ternary sublayer formed between the InAs and InP substrate has been studied in the sam ples deoxidized under the flux of arsenic (AsH3) or phosphorus (PH3). The suitability of SAXPS depth profiling technique for the qualitative characterization of ultra-thin heterostructures is discussed consider ing the limitations of experimental depth resolution.